Vapor growth apparatus for 3-5 group compound semiconductor
文献类型：专利
| 作者 | MIZUTANI TAKASHI |
| 发表日期 | 1982-09-08 |
| 专利号 | JP1982145314A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Vapor growth apparatus for 3-5 group compound semiconductor |
| 英文摘要 | PURPOSE:To improve an epitaxial growth layer by a method wherein a ganerating chamber for III group halogen compound is arraneged in that order of opening of halogen gas introduction tube opening for gas exhaust tube of III group metal material and III group material opening of gas flow introduction tube. CONSTITUTION:Hydrogen gas stream containing HCl is introduced from an introduction tube 3 of halogen gas and is reacted with material In 1 at 800 deg.C to generate InCl and then transferred to the down stream. The InCl can be switched from a condition transferring to the down stream to a condition wherein InCl is discharged from an exhaust tube 6 for the III group material gas and vice versa, by obtaining the balance between the introduction amount of hydrogen from the introduction tube 7 of gas stream and the exhaust amount of the III group raw gas from the exhaust tube 6. Further, the InCl transferred to the down stream is mixed with pH3 gas introduced from the introduction tube 4 of V group gas and InP is grown on the crystal 5. The unnecessary gas finishing the reaction is discharged from a gas exhaust tube 8. |
| 公开日期 | 1982-09-08 |
| 申请日期 | 1981-03-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66039]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | MIZUTANI TAKASHI. Vapor growth apparatus for 3-5 group compound semiconductor. JP1982145314A. 1982-09-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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