Manufacture of photo-semiconductor device
文献类型：专利
| 作者 | KONNO KUNIAKI; KINOSHITA JUNICHI |
| 发表日期 | 1987-01-08 |
| 专利号 | JP1987002582A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of photo-semiconductor device |
| 英文摘要 | PURPOSE:To improve the yield by closely contacting a compound semiconductor epitaxial crystal growth layer with a compound semiconductor containing an impurity in high concentration, and applying heat treatment thereto, thereby selectively diffusing the impurity species into the compound semiconductor epitaxial crystal layer by solid phase diffusion in accordance with the shape of the contact surface. CONSTITUTION:On an N-type InP substrate 11, a double hetero structure consisting of an N-type InP cladding layer 12, a P-type InP cladding layer 14 and an undoped InGaAsP active layer 13, and on the uppermost layer thereof, an N-type InGaAsP current constricting layer 15 are prepared by the epitaxial growth layer method. On the other hand, after diffusing a P-type impurity, Zn, in the surface, a P-type ZnP substrate 16 is prepared in which two trenches are formed by etching so that the diffusion region is in the intermediate position. Then, when the substrates 17, 16 are closely contacted with each other and heat-treated, Zn diffuses in solid phase diffusion through the close contact surface 19 from a region in which Zn diffused in high concentration, reversing part of the layer 15 to a P-type conductive layer 20. With this, the substrate for creating a diffraction grating and the epitaxial growth substrate can be manufactured separately, and thus non-defective units do not become wastages, improving the yield. |
| 公开日期 | 1987-01-08 |
| 申请日期 | 1985-06-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66045]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | KONNO KUNIAKI,KINOSHITA JUNICHI. Manufacture of photo-semiconductor device. JP1987002582A. 1987-01-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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