Optical semiconductor element, method of manufacturing optical semiconductor element and optical module
文献类型：专利
| 作者 | SAKUMA, YASUSHI; MOTODA, KATSUYA; OKAMOTO, KAORU; WASHINO, RYU |
| 发表日期 | 2006-10-05 |
| 专利号 | US20060222032A1 |
| 著作权人 | OPNEXT JAPAN, INC. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical semiconductor element, method of manufacturing optical semiconductor element and optical module |
| 英文摘要 | An InGaAsP thin film layer having the same index of refraction as a diffraction grating is inserted between a p-type InP clad layer and the diffraction grating composed of an InGaAsP layer. In this structure, the InGaAsP layer is present over an active layer, and the amount of thermal diffusion of dopant to the vicinity of the active layer does not depend on an aperture width or the presence or absence of the diffraction grating when the p-type InP clad layer is grown, thereby obtaining a stable optical output, a threshold current, and slope efficiency. |
| 公开日期 | 2006-10-05 |
| 申请日期 | 2005-08-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66047]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OPNEXT JAPAN, INC. |
| 推荐引用方式 GB/T 7714 | SAKUMA, YASUSHI,MOTODA, KATSUYA,OKAMOTO, KAORU,et al. Optical semiconductor element, method of manufacturing optical semiconductor element and optical module. US20060222032A1. 2006-10-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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