Manufacture of semiconductor laser, and semiconductor laser
文献类型：专利
| 作者 | KONDO MASATO |
| 发表日期 | 1991-06-04 |
| 专利号 | JP1991131081A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser, and semiconductor laser |
| 英文摘要 | PURPOSE:To form all layers at a lower temperature thereby avoiding the reevaporation of In so as to realize surface rate-determining epitaxial growth by selecting a compound semiconductor material of composition where Al is not contained. CONSTITUTION:The part, which is the mesa type emitting region of a semiconductor laser and consists of an n-GaAs substrate 1, an n-Ga0.5In0.5P clad layer 2, an n-GaAs guide layer 3, a Ga0.7In0.3As well layer 4, an n-GaAs guide layer 5, and a p-Ga0.5In0.5P clad layer 6, is epitaxially grown. For the Ga0.5In0.5P, the grating constant is the same as GaAs, and it does not contain Al in composition, so epitaxial growth is possible over a wide temperature range, and even in case that the growth temperature is made relatively lower to avoid such inconvenience as the reevaporation of In and the compound formation in vapor phase, the growth layer exhibits favorable crystal properties. What is more, the epitaxial growth is executed over the entire growth temperature 500-650 deg.C. |
| 公开日期 | 1991-06-04 |
| 申请日期 | 1989-10-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66048]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KONDO MASATO. Manufacture of semiconductor laser, and semiconductor laser. JP1991131081A. 1991-06-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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