Manufacture of hetero embedded semiconductor laser
文献类型：专利
| 作者 | KURIHARA HARUKI; IIDA SEIJI |
| 发表日期 | 1982-12-07 |
| 专利号 | JP1982199285A |
| 著作权人 | TOKYO SHIBAURA DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of hetero embedded semiconductor laser |
| 英文摘要 | PURPOSE:To prevent the crystal defect from happening at the active layer sides by a method wherein, in the etching process, the active layer is projected from the upper and lower semiconductor layers in the right and left directions and in the next embedding process, these projections are removed by etching process making use of the solution for growing. CONSTITUTION:The n type Al55Ga65As clad layer 2, undope Al0.5Ga95As active layer 3, p type Al35Ga65As clad layer 4, p type GaAs ohmic layer 5 and undope A 6Ga4As liquidus crystal growth stopping mask layer 6 are successively formd. Next the mesa stripe is formed by etching process through the intermediary of the specified resist pattern. The layers excluding the active layer 3 are etched so that the active layer 3 may be projected from the mesa stripe. Then the undope Al3Ga7As embedded layer 8 is formed so that the mesa stripe may be embedded by means of the liquidus crystal growing. |
| 公开日期 | 1982-12-07 |
| 申请日期 | 1981-06-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66060]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO SHIBAURA DENKI KK |
| 推荐引用方式 GB/T 7714 | KURIHARA HARUKI,IIDA SEIJI. Manufacture of hetero embedded semiconductor laser. JP1982199285A. 1982-12-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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