Distributed reflection semiconductor laser element
文献类型：专利
| 作者 | OGAWA HIROSHI; OSHIBA SAEKO; MATOBA AKIHIRO; KOBAYASHI MASAO |
| 发表日期 | 1988-10-24 |
| 专利号 | JP1988255985A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed reflection semiconductor laser element |
| 英文摘要 | PURPOSE:To contrive the improvement of the coupling efficiency of an active region and an optical waveguide layer by a method wherein an impurity-doped region obtainable by doping a specified impurity to part of an active layer formed in the same growth process is used as the active region and the residual part of the active layer is used as the optical waveguide layer. CONSTITUTION:An active region 32 and an optical waveguide layer 34 are formed of the same grown layer (active layer) 26 formed in the same growth process. The region 31 is constituted of an impurity-doped region obtainable by doping an impurity to part of this layer 26 and the layer 34 is constituted of the impurity-undoped residual part of the layer 26. The impurity to be doped to the layer 26 for forming the region 32 shall be an impurity which is not absorbed in the layer 34 by doping this impurity or such an impurity that the light of a small-absorption wavelength is made to luminescence from the region 32. Accordingly, a scattering loss to generate when the emitted light is incided in the layer 34 from the region 32 and a scattering loss to generate when the feedback light is incided in the active region from the layer 34 are reduced. Thereby, the coupling efficiency of the region 32 and the layer 34 is improved. |
| 公开日期 | 1988-10-24 |
| 申请日期 | 1987-04-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66064]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | OGAWA HIROSHI,OSHIBA SAEKO,MATOBA AKIHIRO,et al. Distributed reflection semiconductor laser element. JP1988255985A. 1988-10-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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