Manufacture of semiconductor laser having embedded structure
文献类型：专利
| 作者 | KATOU YOSHITAKE |
| 发表日期 | 1988-04-09 |
| 专利号 | JP1988079392A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser having embedded structure |
| 英文摘要 | PURPOSE:To prevent the formation of an unnecessary conductor layer at an interface with an embedded region and to implement a semiconductor laser, which can be operated at a low threshold current value and at a high temperature, by performing vapor phase gas etching immediately before embedding vapor growth of high resistance semiconductors. CONSTITUTION:On a semiconductor substrate 25, an N-type buffer layer 23, an active region 21, a P-type clad layer 22 and a P-type cap layer 28 are sequentially grown, and a DH crystal is formed. Grooves, which are to become embedment regions, are formed on both sides of the active region 21 of the DH crystal by chemical etching. Then, the DH crystal, in which the grooves are formed, are put into a vapor growth apparatus, and gas etching is performed. Thereafter, a high resistance semiconductor 24 is embedded and formed in each groove by a vapor growth method. In this way, since a conductor layer is not formed at the interface with the embedment layer, the semiconductor laser, which can be operated at a low threshold current value and at a high temperature, can be obtained. |
| 公开日期 | 1988-04-09 |
| 申请日期 | 1986-09-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66065]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KATOU YOSHITAKE. Manufacture of semiconductor laser having embedded structure. JP1988079392A. 1988-04-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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