(Ga,In)(N,As) Laser structures using distributed feedback
文献类型：专利
| 作者 | CRAIG, TOMBLING; ALISTAIR, HENDERSON, KEAN; MARTIN, DAVID, DAWSON; ANTHONY, EDWARD, KELLY |
| 发表日期 | 2002-05-29 |
| 专利号 | GB2369492A |
| 著作权人 | KAMELIAN LIMITED |
| 国家 | 英国 |
| 文献子类 | 发明申请 |
| 其他题名 | (Ga,In)(N,As) Laser structures using distributed feedback |
| 英文摘要 | A lasing structure comprises a distributed feedback grating associated with an active region 312, the grating defined by a periodic structure of quantum well intermixing. This quantum well intermixing (QWI) can be caused by focussed ion beam (FIB) implantation to the quantum well (QW) or multi-quantum well (MQW) active area 314. Subsequent annealing of the FIB damage will leave local periodic adjustments 316 to the energy levels in the active region, providing the necessary DFB/DBR grating. Alternatively, or in addition, this periodic QWI structure or another periodic variation can be separated from the active region but associated therewith. For example, a QW or MQW structure which overlies the active region will carry the evanescent part of the waveform that is propagating in the active region. A periodic QWI structure in this region will thus affect the waveform. Other means by which this can be achieved are a periodic variation in the dopant concentration, for example created by FIB implantation or masked exposure to an ion beam or the like, a periodic variation in the material of the overlying layers, such as between semiconductor and insulator, and a periodic QWI structure in a QW or MQW structure overlying the active region. |
| 公开日期 | 2002-05-29 |
| 申请日期 | 2000-11-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66068]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KAMELIAN LIMITED |
| 推荐引用方式 GB/T 7714 | CRAIG, TOMBLING,ALISTAIR, HENDERSON, KEAN,MARTIN, DAVID, DAWSON,et al. (Ga,In)(N,As) Laser structures using distributed feedback. GB2369492A. 2002-05-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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