Quantum wire semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | SUGAO SHIGEO |
| 发表日期 | 1992-12-25 |
| 专利号 | JP1992372184A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Quantum wire semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To provide a quantum wire semiconductor laser having high yield and excellent characteristics and manufacture thereof. CONSTITUTION:A quantum wire 15 is formed in a self-formation manner through selective growth using an oxide layer mask by utilizing the difference of the compositions of a well layer, a semi-insulating buffer layer 11 except the well layer, a semi-insulating cap layer 14 and barrier layers 13. Consequently, the dimensional accuracy of the quantum wire is determined by the controllability of epitaxial growth and the quantum wire can be formed with high accuracy. When a plurality of the well layers are formed, multiple quantum wire can be shaped. When the refractive index of the well layer 12 or the barrier layer 13 is set at a high value, an optical confinement coefficient into an active region is increased, and a threshold value can be lowered. |
| 公开日期 | 1992-12-25 |
| 申请日期 | 1991-06-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66086]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SUGAO SHIGEO. Quantum wire semiconductor laser and manufacture thereof. JP1992372184A. 1992-12-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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