Evaluation of compound semiconductor device
文献类型：专利
| 作者 | SAKAMOTO MASAMICHI; OKADA TSUNEICHI |
| 发表日期 | 1986-04-24 |
| 专利号 | JP1986080888A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Evaluation of compound semiconductor device |
| 英文摘要 | PURPOSE:To realize a high-efficiency, instant evaluation of compound semi conductors by a method wherein evaluation of crystallinity is accomplished by using the photoluminescence measurement technique to eliminate the need for cap seal after electrode formation. CONSTITUTION:On a substrate 30, a first compound semiconductor layer 31 of the P or N type is epitaxially grown, whereon a second and third compound semiconductor layers 32, 33 of the same conductivity type are epitaxially grown, for the production of a specimen 34. Exciting light 47 out of a light source 41 is thrown upon the specimen 34, and the resultant photoluminescence 48 is measured. The exciting light 47 thrown upon the specimen 34 is larger than the third semiconductor layer 32 in terms of energy gap, and smaller than the first semiconductor layer 3 The photoluminescence 48 induced by the light 47 therefore is scarcely absorbed by the third semiconductor layer 33 but is absorbed by the second semiconductor layer 32. |
| 公开日期 | 1986-04-24 |
| 申请日期 | 1984-09-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66089]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | SAKAMOTO MASAMICHI,OKADA TSUNEICHI. Evaluation of compound semiconductor device. JP1986080888A. 1986-04-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。