Manufacture of plane light emission type laser element
文献类型：专利
| 作者 | IGA KENICHI; SOUDA HARUHISA; MOGI SACHIHIRO |
| 发表日期 | 1983-12-14 |
| 专利号 | JP1983215087A |
| 著作权人 | TOKYO KOGYO DAIGAKUCHO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of plane light emission type laser element |
| 英文摘要 | PURPOSE:To obtain a plane light emission type laser element by a method wherein a reflection mirror surface is provided on the second epitaxial layer surface by adapting selective etchig technique, utilizing that the epitaxial layer can be easily controlled in layer thickness and that the boundary between the first and second epitaxial layers turns an extermely good plane. CONSTITUTION:An N type GaInAsP etching stopping layer 2, an N type InP clad layer 3, a GaInAsP active layer 4, and a P type InP clad layer 5 are epitaxially formed successively on the plane (100) of an InP substrate The etching stops at the layer 2, when the substrate 1 is removed by etching with hydro chloric acid etchant after polishing the surface into a mirror surface, vapor-depositing an Au/Sn electrode 8, applying a SiO2 mask 16, and removing the electrode 8 by etching with the mixed solution of hydro chloric acid, acetic acid, and hydrogen peroxide. Next, the layer 2 is removed by etching with sulphuric acid solution, and thus the smooth surface of the clad layer 3 is exposed. The first reflection surface 12 which is obtained has evenness and parallelism as a resonator on the surface of the epitaxial layer, together with the second reflection surface 13. The mask 16 is removed, a metallic layer 14 is superposed on the substrate side, and an electrode 11 is added on the other main surface side via an insulation film 9 having a window 10, resulting in completion. |
| 公开日期 | 1983-12-14 |
| 申请日期 | 1982-06-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66102]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO KOGYO DAIGAKUCHO |
| 推荐引用方式 GB/T 7714 | IGA KENICHI,SOUDA HARUHISA,MOGI SACHIHIRO. Manufacture of plane light emission type laser element. JP1983215087A. 1983-12-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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