Crystal growth method on roughened substrate
文献类型：专利
| 作者 | NARUI HIRONOBU; MORI YOSHIFUMI; HIRATA SHOJI |
| 发表日期 | 1991-04-02 |
| 专利号 | JP1991076218A |
| 著作权人 | ソニー株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Crystal growth method on roughened substrate |
| 英文摘要 | PURPOSE:To make it possible to grow excellent epitaxial layer on which a defect is hardly generated by a method wherein an Al mixed crystal layer is crystal-grown on the substrate with crystal growth speed 4Angstrom /sec or below having roughened surface using an Al-containing organic metal chemical vapor growth method. CONSTITUTION:An active layer 44, consisting of undoped AlyGa1-yAs is epitaxially grown on an n-clad layer 43, having a trapezoidal cross-section, on a mesa protrusion 42. When a current block layer 46, consisting of n-type AlxGa1-xAs of the same composition as the n-type clad layer 43, is epitaxially grown using an MOCVD method, the relation between the value x (atomic ratio), namely, the value (x), with which no defect is generated in epitaxial growth against Al content, in other words, an oxide is not generated, and vapor- growth speed g.r. is calculated, and the region smaller than the straight line g.r.=-20x+13, in other words, the slunt-lined region on the left side of the diagram is obtained. As a result, the growth speed g.r. can be suppressed to 4Angstrom /sec., because the mixed crystal ratio (x) of Al is x approx.<0.45 in general. |
| 公开日期 | 1991-04-02 |
| 申请日期 | 1989-08-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66103]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ソニー株式会社 |
| 推荐引用方式 GB/T 7714 | NARUI HIRONOBU,MORI YOSHIFUMI,HIRATA SHOJI. Crystal growth method on roughened substrate. JP1991076218A. 1991-04-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。