Semiconductor laser and vapor growth apparatus
文献类型：专利
| 作者 | TAMAMURA KOJI; KAWARADA YOSHIHIRO |
| 发表日期 | 1991-10-04 |
| 专利号 | JP1991225986A |
| 著作权人 | ソニー株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and vapor growth apparatus |
| 英文摘要 | PURPOSE:To restrain the strain of a crystal structure in a BH-type semiconductor laser from being caused, to avoid the deterioration in a characteristic and to enhance a yield and a productivity by a method wherein a light-emitting action region is constituted of a part which has been formed in a limitative manner on a groove in an active layer. CONSTITUTION:An active layer 3 formed on a groove 2 provides a BH-type semiconductor laser which is surrounded by the following: a clad layer 5 of a first conductivity type at its upper part and its lower part; a clad layer 7 of a second conductivity type; and the clad layer 5 of the first conductivity type which has been formed on mesa protrusions 3. Since a light-emitting action region is constituted of a part formed on the groove 2 of the active layer 6 in a limitative manner, it is hardly affected by a crystal defect on both slopes of an epitaxial growth layer on the mesa protrusions 3 as compared with the case where the active layer on the mesa protrusions 3 is used as the light-emitting action region. The crystallinity of the light-emitting region becomes better than that of the BH-type semiconductor laser in which the active layer 6 has been formed on the mesa protrusions 3. It is possible to avoid that a characteristic is deteriorated by a crystal defect or the like; it is possible to restrain a defective product from being produced and to enhance a yield and a productivity. |
| 公开日期 | 1991-10-04 |
| 申请日期 | 1990-01-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66104]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ソニー株式会社 |
| 推荐引用方式 GB/T 7714 | TAMAMURA KOJI,KAWARADA YOSHIHIRO. Semiconductor laser and vapor growth apparatus. JP1991225986A. 1991-10-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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