Large-output semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | KOMAZAKI IWAO |
| 发表日期 | 1991-01-22 |
| 专利号 | JP1991014280A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Large-output semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To utilize MOVPE technology which is superb in controllability and mass-productivity, to make smooth the connection between an active region and a window region, and to achieve a large-output semiconductor laser controlled in horizontal cross direction. CONSTITUTION:In a large-output semiconductor laser where a current block layer 9 is provided at a mesa which is formed at a clad layer 4 at the upper part of an active layer 3 and at the side surface of the mesa and the area near the end face of a resonator is covered with semiconductor layers 10 and 11 whose band gap is wider than that of the active layer 3, the semiconductor layers 10 and 11 near the end face of the resonator are in mesa shape. Also, in the mesa forming process near the end face of the resonator when producing a semiconductor laser as in the above, no mask is used and a process for selectively eliminating only the current block layer 9 using ammonia etching liquid and a process for eliminating at least the active layer 3 by for example a phosphorous etching liquid without composition dependency are provided. |
| 公开日期 | 1991-01-22 |
| 申请日期 | 1989-06-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66112]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KOMAZAKI IWAO. Large-output semiconductor laser and manufacture thereof. JP1991014280A. 1991-01-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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