Method and apparatus for improving temperature performance for GaAsSb/GaAs devices
文献类型：专利
| 作者 | BOUR, DAVID P.; TAN, MICHAEL R.T.; CHANG, YING-LAN |
| 发表日期 | 2004-08-19 |
| 专利号 | US20040161005A1 |
| 著作权人 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method and apparatus for improving temperature performance for GaAsSb/GaAs devices |
| 英文摘要 | A method and apparatus is provided for improving the temperature performance of GaAsSb materials utilizing an AlGaInP confinement structure. An active region containing a GaAsSb quantum well layer and (In)GaAs barrier layers is sandwiched between two AlGaInP confinement layers. AlGaInP confinement structures provide sufficient electron confinement, thereby improving the stability of the threshold current with respect to increasing temperature for GaAsSb/GaAs heterostructures. |
| 公开日期 | 2004-08-19 |
| 申请日期 | 2003-02-18 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66113]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 推荐引用方式 GB/T 7714 | BOUR, DAVID P.,TAN, MICHAEL R.T.,CHANG, YING-LAN. Method and apparatus for improving temperature performance for GaAsSb/GaAs devices. US20040161005A1. 2004-08-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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