Method for forming lambda/4 phase shift type diffraction grating
文献类型：专利
| 作者 | KAWASAKI KAZUE; TAKAHASHI SHOGO |
| 发表日期 | 1992-08-12 |
| 专利号 | JP1992221875A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for forming lambda/4 phase shift type diffraction grating |
| 英文摘要 | PURPOSE:To easily form a lambda/4 phase shift type diffraction grating without contaminating its surface by growing a semiconductor having a second refractive index on a first diffraction grating and a semiconductor having a first refractive index on a second diffraction grating to bury the first, second gratings. CONSTITUTION:An InGaAsP diffraction grating 17a is grown on the same phase part 4b and an InP diffraction grating 18a is grown on a reverse phase part 4a on a semiconductor substrate 1 by both an optical epitaxy method and a double beam interference exposure method. The grating 17a is buried with InP 18b, and the grating 18a is buried with InGaAsP 17b thereby to form a lambda/4 phase shift type diffraction grating having a region 5 in which its phase is shifted by pi. |
| 公开日期 | 1992-08-12 |
| 申请日期 | 1990-12-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66124]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KAWASAKI KAZUE,TAKAHASHI SHOGO. Method for forming lambda/4 phase shift type diffraction grating. JP1992221875A. 1992-08-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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