Surface treatment method of gaas substrate
文献类型：专利
| 作者 | HIRAYAMA FUKUICHI; TAKEUCHI HIDEO |
| 发表日期 | 1990-08-22 |
| 专利号 | JP1990210830A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface treatment method of gaas substrate |
| 英文摘要 | PURPOSE:To obtain a uniform epitaxial growth layer by treating a GaAs sub strate subjected to surface treatment with acid by using solution containing ethanol or tartaric acid. CONSTITUTION:On a GaAs substrate 1 subjected to surface treatment by using acid, composite oxide of gallium or arsenic remains, and turns to stable oxide when the substrate is preserved in the air. The composite oxide is amorphous, and the composition is gallium oxide, gallium hydroxide, and arsenic oxide such as H3AsO4 and As2O3. These oxide is soluble to aqueous solution of ethanol and tartaric acid, and can be easily dissolved and eliminated. Thereby, the pretreatment of the P-type GaAs substrate 1 can reduce the irregularity of film thickness of a block layer 2 subjected to liquid epitaxial growth. |
| 公开日期 | 1990-08-22 |
| 申请日期 | 1989-02-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66127]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HIRAYAMA FUKUICHI,TAKEUCHI HIDEO. Surface treatment method of gaas substrate. JP1990210830A. 1990-08-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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