Production of optical semiconductor device
文献类型：专利
| 作者 | YAMAZAKI SUSUMU |
| 发表日期 | 1986-01-17 |
| 专利号 | JP1986010100A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Production of optical semiconductor device |
| 英文摘要 | PURPOSE:To produce an optical semiconductor device of high quality without defect, by forming a buffer layer, light absorption layer and pural InGaAsP antimeltback layers of proper mixed crystal ratio, and growing an InP multiplication layer continuously thereto. CONSTITUTION:A light absorption layer 16 consisting of In0.53Ga0.47As in lattice matching with a substrate 12 consisting of InP through a buffer layer 15 consisting of InP in (111) A face of the substrate 12. Plural antimeltback layers 17 consisting of In1-xGaxAs1-yPy in lattice matching with the light absorption layer 16 are formed on the light absorption layer 16 by the liquid phase epitaxial growth continuously to the light absorption layer 16, and the x value is gradually decreased and the y value is gradually increased from the layer in contact with the light absorption layer 16 to the layer in contact with a multiplication layer 18 on the upper layer. The multiplication layer 18 consisting of InP is then formed on the antimeltback layers 17 continuously onto the antimeltback layers 17 by the liquid phase epitaxial growth to give the aimed optical semiconductor laminate of low carrier concentration in a desired extent. |
| 公开日期 | 1986-01-17 |
| 申请日期 | 1985-04-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66131]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | YAMAZAKI SUSUMU. Production of optical semiconductor device. JP1986010100A. 1986-01-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。