Semiconductor laser device and optical disc drive
文献类型：专利
| 作者 | FUJISHIRO, YOSHIE; OHBAYASHI, KEN; YAMAMOTO, KEI |
| 发表日期 | 2005-02-24 |
| 专利号 | US20050041708A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and optical disc drive |
| 英文摘要 | A 780 nm band semiconductor laser device has an InGaAsP well layer, phosphorous composition of which is 0.51 smaller than 0.55 to prevent spinodal decomposition in growing InGaAsP. A compressive strain of 0.65% less than 1% and more than 0.25% is introduced into the well layer to reduce threshold current thereof. Thus, the 0.78-μm band semiconductor laser device having the InGaAsP well layer stably operates for a long time even in outputting a high optical power of 100 mW or more. A tensile strain of 2% is also introduced into barrier layers within the active region so as to compensate the stress due to the compressive strain of the well layer. As a result, the reliability of the semiconductor laser device is further increased during a high output operation. |
| 公开日期 | 2005-02-24 |
| 申请日期 | 2002-11-13 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66132]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | FUJISHIRO, YOSHIE,OHBAYASHI, KEN,YAMAMOTO, KEI. Semiconductor laser device and optical disc drive. US20050041708A1. 2005-02-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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