Semiconductor structure
文献类型：专利
| 作者 | GOMYO AKIKO |
| 发表日期 | 1992-09-29 |
| 专利号 | JP1992273490A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor structure |
| 英文摘要 | PURPOSE:To control oscillation wavelength in an AlGaInP and AlGaInPAs semiconductor laser. CONSTITUTION:A crystalline substrate of surface azimuth of (-11m) [where 5<=m<=13], and equivalent thereto or surface azimuth having deviation within 3 deg. from the surface azimuth and an order array structure mixed crystalline semiconductor layer formed on the crystalline substrate are provided. Order state in the semiconductor layer which is formed epitaxially changes according to difference of a crystalline substrate, and band gap energy of the semiconductor layer accordingly changes. The oscillation wavelength of a semiconductor laser can be changeable using AlGaInP and AlGaInPAs crystal of the same composition. |
| 公开日期 | 1992-09-29 |
| 申请日期 | 1991-02-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66149]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | GOMYO AKIKO. Semiconductor structure. JP1992273490A. 1992-09-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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