Single beam type semiconductor laser array
文献类型：专利
| 作者 | YAMAMOTO SABUROU; MATSUI KANEKI; TANETANI MOTOTAKA; YANO MORICHIKA |
| 发表日期 | 1985-12-04 |
| 专利号 | JP1985245191A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Single beam type semiconductor laser array |
| 英文摘要 | PURPOSE:To oscillate the laser lights in the same phase by accumulating the layers having prescribed refractive index at both side of the groove on a substrate so that the effective refractive index of the active layers become the prescribed value. CONSTITUTION:A p type Ga1-zAlzAs layer 20 (z>y) having lower refractive index than a p type Ga1-yAlyAs clad layer 13 is accumulated on an n type GaAs current blocking layer 12 of both sides of the groove formed through the blocking layer 12 on the layer 13 on a p type GaAs substrate 1 With this configuration, a p type Ga1-xAlxAs active layer 14 directly above it, where 0<=x |
| 公开日期 | 1985-12-04 |
| 申请日期 | 1984-05-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66153]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | YAMAMOTO SABUROU,MATSUI KANEKI,TANETANI MOTOTAKA,et al. Single beam type semiconductor laser array. JP1985245191A. 1985-12-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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