Double-hetero structure semiconductor laser with device
文献类型：专利
| 作者 | ONO YUICHI; YAMASHITA SHIGEO; YOSHIZAWA MISUZU; NAKATSUKA SHINICHI; KAJIMURA TAKASHI; OISHI AKIO; TANAKA TOSHIAKI; KONO TOSHIHIRO; KANEKO TADAO |
| 发表日期 | 1989-07-05 |
| 专利号 | JP1989170082A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Double-hetero structure semiconductor laser with device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device high in output power and reliability easily by a method wherein an optical coupling layer which propagates laser rays is provided to at least one of end face sections in a laser resonator and an active layer is formed so as to be situated at a position where it is optically coupled with the optical coupling layer through the intermediary of a clad layer. CONSTITUTION:A protrudent or a recessed stripe is previously formed on a semiconductor substrate, and a dual double-hetero structure is formed of an optical coupling layer sandwiched in between first clad layers, a laser active layer, and a second clad layer, and the height a of a substrate step is made to be nearly equal to the thickness C between the optical coupling layer and the laser active layer. That is, the laser active layer is made to disappear near an end face through the step so as to be coupled with the optical coupling layer through the intermediary of the clad layer or a transparent section. By these processes, a laser device of this design can be remarkably improved in an optical output breakage limiting value without degrading laser rays in property while a high power is outputted, and as the etching processing of a substrate and a crystal growth can be controlled in thickness, the device can be comparatively easily formed. |
| 公开日期 | 1989-07-05 |
| 申请日期 | 1987-12-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66157]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | ONO YUICHI,YAMASHITA SHIGEO,YOSHIZAWA MISUZU,et al. Double-hetero structure semiconductor laser with device. JP1989170082A. 1989-07-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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