Growing smooth semiconductor layers
文献类型：专利
| 作者 | AKIYAMA, HIDEFUMI; PFEIFFER, LOREN NEIL; WEST, KENNETH WILLIAM; YOSHITA, MASAHIRO |
| 发表日期 | 2005-10-06 |
| 专利号 | US20050221624A1 |
| 著作权人 | AKIYAMA HIDEFUMI |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Growing smooth semiconductor layers |
| 英文摘要 | A method includes epitaxially growing a semiconductor layer with a free surface and performing an anneal that reduces atomic roughness on the free surface. The free surface has an orientation with respect to lattice axes of the layer for which atoms in flat regions of the free surface have more chemical bonds to the layer than do, at least, some of the atoms at edges of monolayer steps on the free surface. |
| 公开日期 | 2005-10-06 |
| 申请日期 | 2005-05-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66161]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AKIYAMA HIDEFUMI |
| 推荐引用方式 GB/T 7714 | AKIYAMA, HIDEFUMI,PFEIFFER, LOREN NEIL,WEST, KENNETH WILLIAM,et al. Growing smooth semiconductor layers. US20050221624A1. 2005-10-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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