Outer resonator type semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | SAITO HIDEHO; IMAMURA YOSHIHIRO |
| 发表日期 | 1989-07-21 |
| 专利号 | JP1989183875A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Outer resonator type semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To make a device compact and to obtain excellent stability and reliability, by forming a monolithic unitary body of a diffraction grating and a semiconductor laser. CONSTITUTION:One side surface of an isolating groove 12 is provided by forming a layer, whose reflectivity is 10% or less, on one side surface of a laser part 11 by a sputtering method and the like. The side surface is perpendicular to a surface 15 of a substrate 1 and a stripe shaped active region 14. The other side surface of the isolating groove 12 is perpendicular to the substrate 1 and forms the slant face having a slant angle theta with respect to the end surface, on which a nonreflective coat 10 is provided. A plurality of grooves 17 are formed on said surface at a pitch (d) in the perpendicular direction to the stripe shaped active region 14 and the substrate surface 15 so as to form a diffraction grating. A metal film having high reflectivity such as gold and aluminum is provided on the surface of the diffraction grating, and a diffraction grating reflecting mirror 13 is formed. Namely, the diffraction grating reflecting mirror 13 and the semiconductor laser 11 are formed as a monolithic unitary body. In this way, the device is made compact, a low cost is implemented and excellent stability and reliability are obtained. |
| 公开日期 | 1989-07-21 |
| 申请日期 | 1988-01-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66173]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | SAITO HIDEHO,IMAMURA YOSHIHIRO. Outer resonator type semiconductor laser and manufacture thereof. JP1989183875A. 1989-07-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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