Semiconductor laser with expanded mode
文献类型：专利
| 作者 | RATOWSKY, RICHARD P.; THIYAGARAJAN, SUMESH MANI K.; ENG, LARS |
| 发表日期 | 2006-03-02 |
| 专利号 | US20060045157A1 |
| 著作权人 | FINISAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser with expanded mode |
| 英文摘要 | Systems and methods for expanding an optical mode of a laser or optical amplifier to reduce leakage current. A waveguide layer is included in a laser that optically couples with the active region. The waveguide layer is configured to expand the optical mode into the layers beneath the active region. This enables the thickness of the layers above the active region to be reduced, thereby reducing leakage current. Because the waveguide layer expanded the optical mode without substantially reducing the optical confinement of the active region, the optical loss associated with the metal contact is also reduced even though the layers between the active region and the metal contact have been thinned. In one embodiment, the threshold current is reduced. |
| 公开日期 | 2006-03-02 |
| 申请日期 | 2004-08-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66175]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | RATOWSKY, RICHARD P.,THIYAGARAJAN, SUMESH MANI K.,ENG, LARS. Semiconductor laser with expanded mode. US20060045157A1. 2006-03-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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