Gaas semiconductor light emitting element
文献类型：专利
| 作者 | OKUBO NORIO; KASHIWA TORU |
| 发表日期 | 1989-03-24 |
| 专利号 | JP1989080092A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Gaas semiconductor light emitting element |
| 英文摘要 | PURPOSE:To restrain a semiconductor light emitting element from deteriorating so as to lengthen the span of life by a method wherein In is doped into a GaAs epitaxial film which composes a bufter layer, where the amout of In to be doped is 0.001-1% of Ga by mole. CONSTITUTION:An n-type In doped GaAs buffer layer 2 and an n-type GaAs active layer 3 are successively formed on a GaAs substrate 1, where In 0.001-1% if Ga by mole is doped into a GaAs epitaxial layer which composes the buffer layer 2. Then, the mismatching between the substrate 1 and the buffer layer 2 is eliminated, the dislocation of the buffer layer 2 from the sub strate 1 is prevented, and a p-n junction is formed, where an injection current is small. By these processes, a semiconductor light emitting element is prevented from deteriorating, and thus it can be lengthened in life. |
| 公开日期 | 1989-03-24 |
| 申请日期 | 1987-09-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66180]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | OKUBO NORIO,KASHIWA TORU. Gaas semiconductor light emitting element. JP1989080092A. 1989-03-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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