Opto-electric integrated circuit device
文献类型：专利
| 作者 | TSUJII HIRAAKI; ONAKA SEIJI; SHIBATA ATSUSHI |
| 发表日期 | 1988-06-23 |
| 专利号 | JP1988151077A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Opto-electric integrated circuit device |
| 英文摘要 | PURPOSE:To make it possible to suppress the effect of a parasitic transistor at a laser part, by constituting an n-clad layer in a double-layer structure of a low concentration lower layer and a high concentration upper layer, making the high concentration upper layer to remain only directly beneath an inverted mesa part when the inverted mesa part is formed, removing the other part of said upper layer, and providing high concentration in a p-type isolating layer among an embedded layer. CONSTITUTION:On a substrate 101, low concentration InP as a lower n-type conductor layer 102 and high concentration InP as an upper n-type clad layer 103 are formed as a double-layer structure. A silicon oxide film 111 is formed in a desired region in order to constitute a laser. An inverted mesa shape 112 is formed by etching. The inverted mesa shape is embedded by using a liquid phase epitaxial growing method. At this time, as an embedded layer, high concentration p-type InP as a p-type isolating layer 121 is formed. Thus, remote junction at an active layer can be prevented in a laser part 132. Since the concentration of the p-type isolating layer 121 can be set high at the lower part of a transistor, a parasitic transistor effect at the laser part 132 can be suppressed effectively. |
| 公开日期 | 1988-06-23 |
| 申请日期 | 1986-12-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66181]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TSUJII HIRAAKI,ONAKA SEIJI,SHIBATA ATSUSHI. Opto-electric integrated circuit device. JP1988151077A. 1988-06-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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