Method for fabrication of semiconductor quantum box structure
文献类型：专利
| 作者 | YAMADA HIROHITO; KITAMURA MITSUHIRO; MITO IKUO |
| 发表日期 | 1990-03-20 |
| 专利号 | JP1990079489A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for fabrication of semiconductor quantum box structure |
| 英文摘要 | PURPOSE:To provide a semiconductor quantum box structure, which is applicable to different semiconductor devices, including optical device, by using macromolecules with uniform dia. as a mask for selective growing. CONSTITUTION:An n-AlGaAs barrier layer 12 is grown on a (100)n-GaAs base board 11, and spin coating is performed by floating polystylene balls 13 of 400Angstrom in dia. in an organic solvent. While the base board is heated to 600 deg.C, selective growth is made by MEB to form an n-GaAs well 14 in the form of an island of 70Angstrom in dia. on the barrier layer 12. This well layer 14 does not grow on the stylene balls, but grows only in the exposed region of barrier layer 12 surrounded by the polystylene balls. Accordingly a quantum box of 70Angstrom in dia. can be fabricated using polystylene balls of 400Angstrom in dia. The residual macromolecules (polystylene ball) are removed by plasma asher, and finally the whole wafer is embedded the n-GaAs well layer 14 by p-AlGaAs barrier layer 15. Thereby a semiconductor quantum box structure of approx. 70Angstrom in size is obtained. |
| 公开日期 | 1990-03-20 |
| 申请日期 | 1988-09-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66191]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | YAMADA HIROHITO,KITAMURA MITSUHIRO,MITO IKUO. Method for fabrication of semiconductor quantum box structure. JP1990079489A. 1990-03-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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