Formation of quantum well structure
文献类型:专利
作者 | MURATA MICHIO; KATSUYAMA TSUKURU |
发表日期 | 1990-06-15 |
专利号 | JP1990156586A |
著作权人 | SUMITOMO ELECTRIC IND LTD |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Formation of quantum well structure |
英文摘要 | PURPOSE:To realize a quantum well structure by one time process by a method wherein a mask to hinder crystal growth is patterned and formed on a substrate surface in the manner as to have a coverage ratio and a shape corresponding with the well with of a layer of the quantum well structure, and epitaxial growth is alternately performed by supplying material gas. CONSTITUTION:On a substrate 1 surface in the vicinity of a region where a quantum well structure is formed, a mask 2 of SiO2, SiNx, etc., to hinder crystal growth is patterned and formed, so as to have a coverage ratio and a shape corresponding with the well width of a well layer 41 to be formed or the barrier width of a barrier layer 3 The barrier layer and the well layer 4 are alternately subjected to epitaxial growth by supplying material gas A, B on the substrate surface. As a result, the barrier width and the well width are widely formed on the substrate 1 surface in the vicinity of the mask 2, and are narrowly formed on the substrate 1 surface distant from the mask 2. At a part where the coverage ratio of the substrate 1 surface by the mask 2 is large, the barrier width and the well width are widely formed. At a part where the coverage ratio is small, the above widths are narrowly formed. As a result, the barrier width and the well width can be freely controlled. Thereby, the quantum well structure can be realized by one time epitaxial growth process. |
公开日期 | 1990-06-15 |
申请日期 | 1988-12-08 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/66193] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SUMITOMO ELECTRIC IND LTD |
推荐引用方式 GB/T 7714 | MURATA MICHIO,KATSUYAMA TSUKURU. Formation of quantum well structure. JP1990156586A. 1990-06-15. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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