Semiconductor photoamplifying element
文献类型：专利
| 作者 | KOBAYASHI UICHIRO |
| 发表日期 | 1986-07-30 |
| 专利号 | JP1986168982A |
| 著作权人 | 日立東部セミコンダクタ株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor photoamplifying element |
| 英文摘要 | PURPOSE:To enable oscillation control high-output laser light by small signal current impressed to a trigger electrode, by a method wherein a drive electrode, which injects a continuous current to an optical waveguide path, and the trigger electrode, which injects electric current at the time of laser oscillation are provided. CONSTITUTION:An anode electrode 25 is constituted of a trigger electrode 21 and a drive electrode 22, and the current injection unit 27 of the trigger electrode 21 is extended horizontally to a center section of an optical waveguide path, and the current injection unit 28 of the drive electrode 22 is extended horizontally to the upper both edge side of the optical waveguide path so as to hold the trigger electrode 21 between them. Prescribed voltage is impressed usually between the drive electrode 22 and a cathode electrode 26, and electric current is flown between the cathode electrode (an electrode 4) and the drive electrode 22 at the state that the signal does not send to the trigger electrode 21, and electric current does not send to the center part of the optical waveguide path, then laser oscillation does not generates. If the signal current flows to the trigger electrode 22, electric current flows to whole length of the optical waveguide path, thus laser light 31 is emitted from the mirror face of both edge of the optical waveguide path. |
| 公开日期 | 1986-07-30 |
| 申请日期 | 1985-01-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66196]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日立東部セミコンダクタ株式会社 |
| 推荐引用方式 GB/T 7714 | KOBAYASHI UICHIRO. Semiconductor photoamplifying element. JP1986168982A. 1986-07-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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