Semicondcutor laser
文献类型：专利
| 作者 | YUJI OHKURA |
| 发表日期 | 1997-11-12 |
| 专利号 | GB2312991A |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semicondcutor laser |
| 英文摘要 | The device comprises a first lower cladding layer 112 lattice matched to a GaAs substrate 101, a second lower AlGaAs cladding layer 113 having a larger band gap energy disposed on the first cladding layer, an active layer 104 having a band gap energy less than the lower cladding layer, a first upper cladding layer 114 disposed on the active layer and having a larger band gap energy than the second upper cladding layer 117 and the active layer, the second cladding layer being lattice matched to the GaAs substrate and having a band gap energy greater than the active layer. The first lower cladding and the second upper cladding layers comprise InGaP. In this structure the stress within the crystalline structure of the device is reduced which improves the reliability of the device. |
| 公开日期 | 1997-11-12 |
| 申请日期 | 1996-05-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66199]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | YUJI OHKURA. Semicondcutor laser. GB2312991A. 1997-11-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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