Semiconductor laser device and method of making same
文献类型：专利
| 作者 | KAGAWA, HITOSHI C/O MITSUBISHI DENKI K.K.; YAGI, TETSUYA C/O MITSUBISHI DENKI K.K. |
| 发表日期 | 1990-10-10 |
| 专利号 | EP0390995A2 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and method of making same |
| 英文摘要 | A semiconductor laser includes a groove (10) in a GaAs first current blocking layer (5), which extends to an AlxGa(1-x)As second clad layer (4) beneath the first blocking layer (5). The width of the groove (10) periodically changes between larger and smaller widths along the length of the resonator. Over the regions of the first current blocking layer (5) where the groove has the smaller width, a grating-shaped AlzGa(1-z)As second current blocking layer (6) is formed. An AlxGa(1-x)As third current blocking layer (7) is formed over the second current blocking layer (6) and the portions of the first current blocking layer (5) not covered by the second current blocking layer (6). The variation of the width of the groove (10) is provided by placing a wafer with the groove formed in the first current blocking layer (5) in a metal organic thermal decomposition crystal deposition apparatus and heating it, while causing hydrogen chloride to flow, or placing the wafer in a molecular beam epitaxial deposition apparatus and heating it while irradiating with an arsenic molecular beam, or by placing a liquid-phase epitaxial deposition apparatus and causing to pass over the wafer a melt which selectively melts the first current blocking layer (5) but not the second current blocking layer (6). |
| 公开日期 | 1990-10-10 |
| 申请日期 | 1989-07-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66211]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KAGAWA, HITOSHI C/O MITSUBISHI DENKI K.K.,YAGI, TETSUYA C/O MITSUBISHI DENKI K.K.. Semiconductor laser device and method of making same. EP0390995A2. 1990-10-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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