Jig for treating semiconductor surface
文献类型:专利
作者 | TAJIRI FUMIKO; WADA MASARU; HAMADA TAKESHI; ITOU KUNIO |
发表日期 | 1985-07-25 |
专利号 | JP1985140780A |
著作权人 | MATSUSHITA DENKI SANGYO KK |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Jig for treating semiconductor surface |
英文摘要 | PURPOSE:To form an accurate uniform metallic film only on the beam projecting surface of a semicondutor by fitting and shielding one side of the beam projecting surface by the stepped section of an interposing member interposed between adjoining and juxtaposed semiconductors. CONSTITUTION:With cylindrical semiconductor laser wafers 1, only both beam projecting surfaces 1a are coated with dielectrics, the same electrode surfaces 1b are brought mutually into contact at every pair, and beam projecting surfaces 1a are arranged in parallel while being exposed upward. Interposing materials 5, 6 are interposed among these wafers 1, and stepped sections 5a, 5b fitting and shielding beam projecting surfaces 1a are formed on the sides of side surfaces being in contact with electrode surfaces for the wafers 1 in the interposing materials 5. 6. Accordingly, the short circuit of the positive and negative electrode surfaces on both beam projecting surface sides can be prevented. |
公开日期 | 1985-07-25 |
申请日期 | 1983-12-27 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/66214] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MATSUSHITA DENKI SANGYO KK |
推荐引用方式 GB/T 7714 | TAJIRI FUMIKO,WADA MASARU,HAMADA TAKESHI,et al. Jig for treating semiconductor surface. JP1985140780A. 1985-07-25. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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