Single-wavelength quantum well semiconductor laser element
文献类型：专利
| 作者 | YUKITANI TAKESHI; KASUKAWA AKIHIKO; MATSUMOTO SHIGETO; IWASE MASAYUKI; OKAMOTO HIROSHI |
| 发表日期 | 1992-07-28 |
| 专利号 | JP1992206789A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Single-wavelength quantum well semiconductor laser element |
| 英文摘要 | PURPOSE:To enhance the spectral purity by specifing the number of quantum well layers and the thickness of the quantum well layer. CONSTITUTION:Continuously formed and grown on a n-InP substrate 21 by using MOCVD method are n-InP clad layer 22, a non-dope GaInAsP confinement layer 27 with the width of forbidden band varying in a stepped pattern 23, a quantum well 24 comprising a non-dope GaInAs quantum well layer 25 and a non-dope GaIn-AsP barrier layer 26, and a non-dope GaInAsP confinement layer 27 with the width of forbidden band varying in a stepped pattern. Number of the quantum wells is set to two and the layer thickness is set to 2nm minimum and 8nm maximum. |
| 公开日期 | 1992-07-28 |
| 申请日期 | 1990-11-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66221]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | YUKITANI TAKESHI,KASUKAWA AKIHIKO,MATSUMOTO SHIGETO,et al. Single-wavelength quantum well semiconductor laser element. JP1992206789A. 1992-07-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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