Semiconductor laser and production of it
文献类型：专利
| 作者 | KOMAZAKI IWAO |
| 发表日期 | 1992-06-05 |
| 专利号 | JP1992162484A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and production of it |
| 英文摘要 | PURPOSE:To form a couple of regions at a time, realize simplification of process and obtain high reliability ratio and high efficiency without exposing an active layer by making smaller a In crystal mixing ratio of active layer on a semiconductor substrate having a mesa stripe in the vicinity of the end face of a resonator than that in the central area. CONSTITUTION:Stripes which are, for example, 3mum in width in the active region, 50mum in the window region, are formed on a substrate 1 with the coupling area of 50mum and depth of 2mum. Moreover, a clad layer 2, active layer 3, clad layer 4 and cap layer 5 are sequentially grown continuously. Next, a resist 6 is attached to the center of striped area and it is then etched leaving 0.3mum of the clad layer 4. Moreover, SiO2 insulating film 7 is provided to the entire part, except for the area on the mesa stripe. Finally, a P-type electrode 8 is provided to the surface and an N-type electrode 9 to the rear surface of substrate and the center of window region is cleavaged. The carrier injected from the P-type electrode 8 diffused only into the center area of stripe, In crystal mixing ratio included in the active layer changes in the form of a tapered area and mode control in the lateral direction of optical beam is kept stable even for high output operation period. |
| 公开日期 | 1992-06-05 |
| 申请日期 | 1990-10-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66224]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KOMAZAKI IWAO. Semiconductor laser and production of it. JP1992162484A. 1992-06-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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