Manufacture of distorted quantum well laser
文献类型：专利
| 作者 | FUKUNAGA TOSHIAKI; WATANABE KENJI |
| 发表日期 | 1992-08-25 |
| 专利号 | JP1992237182A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of distorted quantum well laser |
| 英文摘要 | PURPOSE:To enable a distorted quantum well laser to be sharply shortened in manufacturing time and lessened in oscillation threshold current, temperature dependence, and emission beam width by a method wherein the distorted quan tum well laser structure provided with a current constriction mechanism and a refractive index waveguide mechanism is formed through the growth of crys tal. CONSTITUTION:An N-AlGaAs clad layer 12 and a GaAs light guide layer are formed on an N-GaAs substrate 11 through a molecular beam epitaxial growth method, and a process through which a stripe-like mask 14 is set above the substrate and another process through which the diffusion of atoms is controlled in the growth of a distorted quantum well which serves as an active layer to form a GaAs buried layer 16 where an InGaAs quantum well active layer 15 is buried are provided. |
| 公开日期 | 1992-08-25 |
| 申请日期 | 1991-01-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66236]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | FUKUNAGA TOSHIAKI,WATANABE KENJI. Manufacture of distorted quantum well laser. JP1992237182A. 1992-08-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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