Double hetero-junction type semiconductor laser
文献类型：专利
| 作者 | KINOSHITA KIYOUICHI; SUGII KIYOMASA; NAGANUMA MITSURU; SUZUKI YOSHIFUMI |
| 发表日期 | 1983-07-21 |
| 专利号 | JP1983122794A |
| 著作权人 | NIPPON TELEGRAPH & TELEPHONE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Double hetero-junction type semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a laser with extremely small temperature dependance of oscillation wavelength and injection current dependence into an active layer, by alternately laminating the first and second semiconductor layers with different Pb/Sn ratios so that the energy band gap of an active layer, in case of low operational temperature and high operational temperature, varies mutually in reverse relation. CONSTITUTION:On a P type PbTe substrate 1, a P type Pb0.93 Sn0.07 Te clad layer 2, an N type active layer 3 and an N type clad layer 4 are laminated resulting in epitaxial growth, then a groove entering from the layer 4 into the layer 2 is opened in a ring form, and the part surrounded thereby is used as a mesa part. Next, the entire surface is covered with an insulating layer 7, then a window is opened for the mesa part, and an electrode 6 contacted on the mesa part is adhered. In such a constitution, the active layer 3 is constituted of the alternate laminated body with the first semiconductor layer having narrow energy band gap represented in Pb1-x'Snx'Te (0 |
| 公开日期 | 1983-07-21 |
| 申请日期 | 1982-01-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66240]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH & TELEPHONE |
| 推荐引用方式 GB/T 7714 | KINOSHITA KIYOUICHI,SUGII KIYOMASA,NAGANUMA MITSURU,et al. Double hetero-junction type semiconductor laser. JP1983122794A. 1983-07-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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