Planar type light-emitting element
文献类型：专利
| 作者 | IGUCHI SHINICHI |
| 发表日期 | 1984-11-16 |
| 专利号 | JP1984202676A |
| 著作权人 | SUMITOMO DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Planar type light-emitting element |
| 英文摘要 | PURPOSE:To fit the titled light-emitting element to a monolithic integrated OEIC while reducing a stepped section by drawing out a lower electrode in the element by a conductive region, which is formed partially into a semi-insulating semiconductor base body and a buried layer and one part thereof is exposed to the surface of the element. CONSTITUTION:A P type conductive region 22 is formed partially by selectively diffusing Zn to the surface of a semi-insulating GaAs substrate 23. A growth layer of GaAlAs/GaAs double hetero-structure is formed on the substrate 23. A section 21 as a laser is left in a stripped shape, the residual growth layer is removed through etching, and a GaAlAs layer 25 having high resistance is grown through a molecular beam epitaxial growth method to completely bury the laser 2 The thickness of the GaAlAs layer 25 is equal to that of the laser 21 at that time, and the surface of an element is flattened. An N type conductive layer 29, a source 31 and a drain 32 in an FET and a channel 33 in the FET are each formed through ion implantation, and metallic wirings 28, 27, 30 and a gate electrode 26 in the FET are shaped accordingly. |
| 公开日期 | 1984-11-16 |
| 申请日期 | 1983-04-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66249]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | IGUCHI SHINICHI. Planar type light-emitting element. JP1984202676A. 1984-11-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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