High output power semiconductor laser
文献类型：专利
| 作者 | HORIUCHI SHIGEKI; KOKUBO YOSHIHIRO; OOTAKI KANAME; KUMABE HISAO; TAKAMIYA SABUROU |
| 发表日期 | 1984-03-27 |
| 专利号 | JP1984052892A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | High output power semiconductor laser |
| 英文摘要 | PURPOSE:To improve the heat dissipating property and enable to array multiple active regions at narrow interval by a method wherein the band width where Zn is selectively diffused is made narrower without providing P and N electrodes on the same surface while eliminating a groove produced by means of mesa etching. CONSTITUTION:An N type AlyGa1-yAs clad layer 102, an N type AlxGa1-xAs active layer 103, an N type AlyGa1-yAs clad layer 104, a P type AlyGa1-y layer 105 and an N type GaAs contact layer 106 are successivel formed on an N type GaAs substrate 10 Next Zn is selectively diffused in the three band- shaped parts extending from the surface of the contact layer 106 to a pair of resonator ends 110 slenderly in the vertical direction ending slightly inside the both ends 110 to be heat-treated forming each Zn diffused P regions 108 and each Zn drive P regions 109. The diffused front of the Zn drive P regions 109 is controlled to reach the clad layer 102 but not to reach the substrate 10 Then a P electrode 111 and an N electrode 112 are respectively formed on the surface of the contact layer 106 and on the backside surface of the substrate 10 |
| 公开日期 | 1984-03-27 |
| 申请日期 | 1982-09-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66250]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | HORIUCHI SHIGEKI,KOKUBO YOSHIHIRO,OOTAKI KANAME,et al. High output power semiconductor laser. JP1984052892A. 1984-03-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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