Manufacture of semioconductor laser
文献类型：专利
| 作者 | KADOWAKI TOMOKO |
| 发表日期 | 1989-12-22 |
| 专利号 | JP1989318276A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semioconductor laser |
| 英文摘要 | PURPOSE:To make it possible to control the thickness of a second clad layer in a non-ridge portion with precision and obtain desired characteristics with excellent reproducibility by a method wherein monitor patterns which peel off one after another as side etch progresses are provided on a semiconductor layer and its etching amount is determined according to the peeling of the monitor patterns. CONSTITUTION:A mask 10a for forming ridges on a laser portion and a monitor pattern 10b for controlling etching are provided on a cap layer 5 when patterning of SiO2 is made. Next, for example, by using an etching solution of H2SO4+H2O2, etching is performed so that the amount of etching in the direction becomes about 1/2 to 3/4 of a desired etching amount T At this point, when the desired etching amount in the direction passing through the cap layer 5 and reaching the midway of the second clad layer 4a is T1, the side etch amount is S1, and if etching is stopped when the monitor pattern 10b of a width [2S1+0.1] is adhered, its etching depth is T This makes it possible to obtain desired characteristics of the semiconductor with excellent reproducibility. |
| 公开日期 | 1989-12-22 |
| 申请日期 | 1988-06-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66256]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KADOWAKI TOMOKO. Manufacture of semioconductor laser. JP1989318276A. 1989-12-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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