Vielfachhalbleiterlaser
文献类型：专利
| 作者 | SHIGIHARA KIMIO C/O MITSUBISHI DENKI K. K. ITAMI-SHI HOGO 664 JP; WATANABE HITOSHI C/O MITSUBISHI DENKI K. K. ITAMI-SHI HOGO 664 JP; KADOWAKI TOMOKO C/O MITSUBISHI DENKI K. K. ITAMI-SHI HOGO 664 JP; NISHIGUCHI HARUMI C/O MITSUBISHI DENKI K. K. ITAMI-SHI HOGO 664 JP; ISSHIKI KUNIHIKO C/O MITSUBISHI DENKI K. K ITAMI-SHI HOGO 664 JP |
| 发表日期 | 1997-09-11 |
| 专利号 | DE69312836D1 |
| 著作权人 | MITSUBISHI DENKI K.K. TOKIO/TOKYO JP |
| 国家 | 德国 |
| 文献子类 | 授权发明 |
| 其他题名 | Vielfachhalbleiterlaser |
| 英文摘要 | A semiconductor laser device includes a semiconductor laser array chip (3) including a plurality of active regions (4a,4b,4c), each region being driven independently, and a heat sink (2) comprising a plurality of layers comprising an insulating material having relatively high thermal conductivity (2a) and a plurality of layers comprising an insulating material having relatively low thermal conductivity (2b), which are alternately laminated in the array direction of the active regions (4a,4b,4c). The semiconductor laser array chip (3) is disposed on the heat sink (2) so that at least one of the low thermal conductivity layers (2b) of the heat sink (2) is present beneath each region between adjacent active regions of the laser array (3). Therefore, thermal crosstalks between the active regions of the laser array are reduced. |
| 公开日期 | 1997-09-11 |
| 申请日期 | 1993-03-23 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66257]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI K.K. TOKIO/TOKYO JP |
| 推荐引用方式 GB/T 7714 | SHIGIHARA KIMIO C/O MITSUBISHI DENKI K. K. ITAMI-SHI HOGO 664 JP,WATANABE HITOSHI C/O MITSUBISHI DENKI K. K. ITAMI-SHI HOGO 664 JP,KADOWAKI TOMOKO C/O MITSUBISHI DENKI K. K. ITAMI-SHI HOGO 664 JP,et al. Vielfachhalbleiterlaser. DE69312836D1. 1997-09-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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