Surface light emitting type semiconductor laser
文献类型：专利
| 作者 | SHIMADA KATSUTO |
| 发表日期 | 1992-05-18 |
| 专利号 | JP1992144183A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface light emitting type semiconductor laser |
| 英文摘要 | PURPOSE:To determine a deflecting direction to one arbitrary direction by providing long and short axes in a sectional shape of a vertical optical resonator when viewed from above a semiconductor substrate. CONSTITUTION:A laser resonator has a GaAs active layer 104, P-type Al0.4Ga0.6 As clad layers 105 disposed on and underneath the layer 104, an N-type Al0.4 Ga0.6As clad layer 103, a P-type Al0.3Ga0.7As current passage layer 106, and a P-type Al0.1Ga0.9As contact layer 107. The sectional shape of an optical resonator is elliptical, and has two symmetrical surfaces 115, 116 as indicated by broken lines. Here, a laser light linearly polarized in a direction parallel to the surface 115 can be emitted. |
| 公开日期 | 1992-05-18 |
| 申请日期 | 1990-10-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66259]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | SHIMADA KATSUTO. Surface light emitting type semiconductor laser. JP1992144183A. 1992-05-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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