High power laterally antiguided semiconductor light source with reduced transverse optical confinement
文献类型：专利
| 作者 | BOTEZ, DAN; PETRESCU-PRAHOVA, IULIAN BASARAB; MAWST, LUKE J. |
| 发表日期 | 2000-02-03 |
| 专利号 | CA2338106A1 |
| 著作权人 | WISCONSIN ALUMNI RESEARCH FOUNDATION |
| 国家 | 加拿大 |
| 文献子类 | 发明申请 |
| 其他题名 | High power laterally antiguided semiconductor light source with reduced transverse optical confinement |
| 英文摘要 | A semiconductor structure for use as a laser or amplifier has a multilayerstructure including a substrate, an active region, optical confinement and claddinglayers on each side of the active region to surround the active region. The structureincludes at least one core element at which light emission occurs and interelementregions laterally adjacent to the core element with the effective refractive index ofthe interelement regions higher than that of the core element to provide antiguidingof light emitted in the core element. The optical confinement and cladding layers onopposite sides of the active region have different indexes of refraction to provide anoptical waveguiding structure in the transverse direction in the core element which isasymmetrical and which favors lasing only in the fundamental transverse mode. Thestructure allows larger core elements to be utilized than otherwise possible and resultsin a significantly increased light emission spot size enabling much higher emissionpower levels for lasers and higher saturation power levels for amplifiers. |
| 公开日期 | 2000-02-03 |
| 申请日期 | 1999-07-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66268]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | WISCONSIN ALUMNI RESEARCH FOUNDATION |
| 推荐引用方式 GB/T 7714 | BOTEZ, DAN,PETRESCU-PRAHOVA, IULIAN BASARAB,MAWST, LUKE J.. High power laterally antiguided semiconductor light source with reduced transverse optical confinement. CA2338106A1. 2000-02-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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