中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Vertical cavity surface emitting laser and a method of fabrication thereof

文献类型:专利

作者KAPON, ELYAHOU; IAKOVLEV, VLADIMIR; SIRBU, ALEXEI; RUDRA, ALOK
发表日期2003-08-28
专利号US20030162315A1
著作权人EPFL
国家美国
文献子类发明申请
其他题名Vertical cavity surface emitting laser and a method of fabrication thereof
英文摘要An electrically pumped VCSEL and a method of its fabrication are presented. The VCSEL comprises an active cavity material sandwiched between top and bottom DBR stacks, the top DBR having at least one n-semiconductor layer. The device defines an aperture region between the structured surface of the active cavity material and the n-semiconductor layer of the top DBR stack. The structured surface is formed by a top surface of a mesa that includes at least the upper n++layer of a p++/n++tunnel junction and the surface of a p-type layer outside the mesa. The structured surface is fused to the surface of the n-semiconductor layer of the DBR stack due to the deformation of these surfaces, thereby creating an air gap in the vicinity of the mesa between the fused surfaces. The active region is defined by the current aperture which includes the mesa surrounded by the air gap, thereby allowing for restricting an electrical current flow to the active region, while the air gap provides for the lateral variation of the index of refraction in the VCSEL.
公开日期2003-08-28
申请日期2003-03-06
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/66326]  
专题半导体激光器专利数据库
作者单位EPFL
推荐引用方式
GB/T 7714
KAPON, ELYAHOU,IAKOVLEV, VLADIMIR,SIRBU, ALEXEI,et al. Vertical cavity surface emitting laser and a method of fabrication thereof. US20030162315A1. 2003-08-28.

入库方式: OAI收割

来源:西安光学精密机械研究所

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