Near planar native-oxid VCSEL device and arrays
文献类型：专利
| 作者 | SCHNEIDER, RICHARD P., JR.; TAN, MICHAEL R.T.; CORZINE, SCOTT W. |
| 发表日期 | 2000-04-26 |
| 专利号 | EP0898344A3 |
| 著作权人 | AGILENT TECHNOLOGIES, INC. (A DELAWARE CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Near planar native-oxid VCSEL device and arrays |
| 英文摘要 | A VCSEL [100] with a near planar top surface on which the top electrode [111] is deposited. A VCSEL [100] according to the present invention includes a top electrode [111], a top mirror [115] having a top surface, a light generation region [120], and a bottom mirror [116] for reflecting light toward the top mirror [115]. At least one of the mirrors includes a plurality of planar electrically conducting layers having different indices of refraction. In addition, at least one of the layers includes an oxidizable material. To expose this layer to an oxidizing agent (thereby converting the material to an electrical insulator), three or more holes [112] are etched down from the top surface of the VCSEL [100] to the layer [118] containing the oxidizable material. The oxidizing agent is then introduced into the top of these holes. The partial oxidation of the layer converts the layer to one having a conducting region [121] surrounded by an electrically insulating region, the conducting region being positioned under the top electrode. |
| 公开日期 | 2000-04-26 |
| 申请日期 | 1998-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66501]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AGILENT TECHNOLOGIES, INC. (A DELAWARE CORPORATION |
| 推荐引用方式 GB/T 7714 | SCHNEIDER, RICHARD P., JR.,TAN, MICHAEL R.T.,CORZINE, SCOTT W.. Near planar native-oxid VCSEL device and arrays. EP0898344A3. 2000-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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