Vertical cavity surface emitting lasers with silicon-on-insulator high contrast grating
文献类型:专利
作者 | CHANG-HASNAIN, CONNIE; CHASE, CHRISTOPHER; RAO, YI |
发表日期 | 2012-11-01 |
专利号 | WO2012149497A2 |
著作权人 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
国家 | 世界知识产权组织 |
文献子类 | 发明申请 |
其他题名 | Vertical cavity surface emitting lasers with silicon-on-insulator high contrast grating |
英文摘要 | A surface emitting laser apparatus is formed using a patterned silicon-on- insulator (SOI)-like substrate which is patterned with a buried sub-wavelength high contrast grating and adapted for bonding of a half-VCSEL device containing at least an active region and an upper mirror, to create a VCSEL. The wavelength of the VCSEL, or any individual VCSEL within an array of VCSEL devices, can be set in response to changing HCG characteristics of the lower mirror in the SOI-like substrate, or in the region above the lower mirror within the half-VCSEL. The inventive VCSEL device and fabrication method are beneficial for a number of application and devices. |
公开日期 | 2012-11-01 |
申请日期 | 2012-04-28 |
状态 | 未确认 |
源URL | [http://ir.opt.ac.cn/handle/181661/66534] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
推荐引用方式 GB/T 7714 | CHANG-HASNAIN, CONNIE,CHASE, CHRISTOPHER,RAO, YI. Vertical cavity surface emitting lasers with silicon-on-insulator high contrast grating. WO2012149497A2. 2012-11-01. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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