中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Vertical cavity surface emitting lasers with silicon-on-insulator high contrast grating

文献类型:专利

作者CHANG-HASNAIN, CONNIE; CHASE, CHRISTOPHER; RAO, YI
发表日期2012-11-01
专利号WO2012149497A2
著作权人THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
国家世界知识产权组织
文献子类发明申请
其他题名Vertical cavity surface emitting lasers with silicon-on-insulator high contrast grating
英文摘要A surface emitting laser apparatus is formed using a patterned silicon-on- insulator (SOI)-like substrate which is patterned with a buried sub-wavelength high contrast grating and adapted for bonding of a half-VCSEL device containing at least an active region and an upper mirror, to create a VCSEL. The wavelength of the VCSEL, or any individual VCSEL within an array of VCSEL devices, can be set in response to changing HCG characteristics of the lower mirror in the SOI-like substrate, or in the region above the lower mirror within the half-VCSEL. The inventive VCSEL device and fabrication method are beneficial for a number of application and devices.
公开日期2012-11-01
申请日期2012-04-28
状态未确认
源URL[http://ir.opt.ac.cn/handle/181661/66534]  
专题半导体激光器专利数据库
作者单位THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
推荐引用方式
GB/T 7714
CHANG-HASNAIN, CONNIE,CHASE, CHRISTOPHER,RAO, YI. Vertical cavity surface emitting lasers with silicon-on-insulator high contrast grating. WO2012149497A2. 2012-11-01.

入库方式: OAI收割

来源:西安光学精密机械研究所

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