Method to fabricate GaN-based vertical-cavity surface-emitting devices featuring silicon-diffusion defined current blocking layer
文献类型：专利
| 作者 | YEH, PING-HUI; YU, MENG-CHUN; LIN, JIA-HUAN; HUANG, CHING-CHIN |
| 发表日期 | 2017-04-13 |
| 专利号 | US20170104315A1 |
| 著作权人 | NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method to fabricate GaN-based vertical-cavity surface-emitting devices featuring silicon-diffusion defined current blocking layer |
| 英文摘要 | This invention discloses a method for the fabrication of GaN-based vertical cavity surface-emitting devices featuring a silicon-diffusion defined current blocking layer (CBL). Such devices include vertical-cavity surface-emitting laser (VCSEL) and resonant-cavity light-emitting diode (RCLED). The silicon-diffused P-type GaN region can be converted into N-type GaN and thereby attaining a current blocking effect under reverse bias. And the surface of the silicon-diffused area is flat so the thickness of subsequent optical coating is uniform across the emitting aperture. Thus, this method effectively reduces the optical-mode field diameter of the device, significantly decreases the spectral width of LED, and produces single-mode emission of VCSEL |
| 公开日期 | 2017-04-13 |
| 申请日期 | 2015-10-07 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66555]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY |
| 推荐引用方式 GB/T 7714 | YEH, PING-HUI,YU, MENG-CHUN,LIN, JIA-HUAN,et al. Method to fabricate GaN-based vertical-cavity surface-emitting devices featuring silicon-diffusion defined current blocking layer. US20170104315A1. 2017-04-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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