MOCVD-grown InGaAsN using efficient and novel precursor, tertibutylhydrazine, for optoelectronic and electronic device applications
文献类型：专利
| 作者 | SHARPS, PAUL R.; HOU, HONG QI; LI, NEIN-YI; KANJOLIA, RAVI |
| 发表日期 | 2002-08-01 |
| 专利号 | US20020102847A1 |
| 著作权人 | SHARPS PAUL R. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | MOCVD-grown InGaAsN using efficient and novel precursor, tertibutylhydrazine, for optoelectronic and electronic device applications |
| 英文摘要 | TBHy is demonstrated as an efficient and a less carbon-containing N precursor for the growth of high-quality InGaAsN by MOCVD at lower growth temperatures. The photovoltaic characteristics of 20 eV InGaAsN solar cells, such as open-circuit voltage, short-circuit current, fill factor and efficiency are improved significantly by using TBHy compared to using DMHy. This demonstration can also be applied to other InGaAsN-based optoelectronic and electronic devices. Therefore, this invention is extremely important to expedite the demonstration of next-generation prototype products such as 3 mum-InGaAsN-epitaxial VCSELs for high-speed optical communications, low-power Npn InGaP/InGaAsN/GaAs HBTs and InGaP/AlGaAs/InGaAsN HEMTs for wireless applications, and high-efficiency multiple-junction InGaP/GaAs/InGaAsN/Ge solar cells for space power systems. |
| 公开日期 | 2002-08-01 |
| 申请日期 | 2001-09-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66629]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARPS PAUL R. |
| 推荐引用方式 GB/T 7714 | SHARPS, PAUL R.,HOU, HONG QI,LI, NEIN-YI,et al. MOCVD-grown InGaAsN using efficient and novel precursor, tertibutylhydrazine, for optoelectronic and electronic device applications. US20020102847A1. 2002-08-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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