中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Vertical cavity surface emitting laser device having a higher optical output power

文献类型:专利

作者CASIMIRUS, SETIAGUNG; KAGEYAMA, TAKEO
发表日期2006-08-31
专利号US20060193361A1
著作权人FURUKAWA ELECTRIC CO., LTD., THE
国家美国
文献子类发明申请
其他题名Vertical cavity surface emitting laser device having a higher optical output power
英文摘要A vertical cavity surface emitting laser (VCSEL) device includes has an epitaxial layer structure formed on a GaAs substrate and including a pair of multilayer reflectors and a tunnel junction structure. The tunnel junction structure is configured by a heavily-doped n-type Tix2Inx1Ga1-x1-x2As1-y1-y2Ny1Sby2 mixed-crystal layer and a heavily-doped p-type Tix4Inx3Ga1-x3-x4As1-y3-y4Ny3Sby4 mixed-crystal layer, where 0≦x2≦0.3, 0≦x1≦0.3, 0
公开日期2006-08-31
申请日期2006-02-06
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/66657]  
专题半导体激光器专利数据库
作者单位FURUKAWA ELECTRIC CO., LTD., THE
推荐引用方式
GB/T 7714
CASIMIRUS, SETIAGUNG,KAGEYAMA, TAKEO. Vertical cavity surface emitting laser device having a higher optical output power. US20060193361A1. 2006-08-31.

入库方式: OAI收割

来源:西安光学精密机械研究所

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