Vertical cavity surface emitting laser device having a higher optical output power
文献类型:专利
作者 | CASIMIRUS, SETIAGUNG; KAGEYAMA, TAKEO |
发表日期 | 2006-08-31 |
专利号 | US20060193361A1 |
著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
国家 | 美国 |
文献子类 | 发明申请 |
其他题名 | Vertical cavity surface emitting laser device having a higher optical output power |
英文摘要 | A vertical cavity surface emitting laser (VCSEL) device includes has an epitaxial layer structure formed on a GaAs substrate and including a pair of multilayer reflectors and a tunnel junction structure. The tunnel junction structure is configured by a heavily-doped n-type Tix2Inx1Ga1-x1-x2As1-y1-y2Ny1Sby2 mixed-crystal layer and a heavily-doped p-type Tix4Inx3Ga1-x3-x4As1-y3-y4Ny3Sby4 mixed-crystal layer, where 0≦x2≦0.3, 0≦x1≦0.3, 0 |
公开日期 | 2006-08-31 |
申请日期 | 2006-02-06 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/66657] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
推荐引用方式 GB/T 7714 | CASIMIRUS, SETIAGUNG,KAGEYAMA, TAKEO. Vertical cavity surface emitting laser device having a higher optical output power. US20060193361A1. 2006-08-31. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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