Vertical Cavity Surface Emitting Laser
文献类型：专利
| 作者 | THOMAS AGGERSTAM |
| 发表日期 | 2003-01-08 |
| 专利号 | GB2377318A |
| 著作权人 | MITEL SEMICONDUCTOR AB |
| 国家 | 英国 |
| 文献子类 | 发明申请 |
| 其他题名 | Vertical Cavity Surface Emitting Laser |
| 英文摘要 | A vertical cavity surface emitting laser has a confinement means in a top mirror structure to confine optical output from the VCSEL to an asymmetric path. The confinement means may be a plurality of etched apertures in the top mirror structure. Ions may be implanted to confine current flow between electrical contacts associated with the top mirror structure and a bottom mirror structure. The VCSEL may have apertures in the top mirror in order to select the polarisation mode. The top and bottom mirrors may be Bragg gratings. The bottom mirror may be a graded index separate confining heterostructure (GRINSCH), multi quantum well (MQW) region. The laser may have a substrate made from gallium arsenide. |
| 公开日期 | 2003-01-08 |
| 申请日期 | 2001-07-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66674]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITEL SEMICONDUCTOR AB |
| 推荐引用方式 GB/T 7714 | THOMAS AGGERSTAM. Vertical Cavity Surface Emitting Laser. GB2377318A. 2003-01-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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